Product Summary

The IRF7314TRPBF is a HEXFET Power MOSFET. The IRF7314TRPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7314TRPBF absolute maximum ratings: (1)Drain source voltage, VDS: 30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, 6.5A; TA=70℃, 5.2A; (4)Pulsed drain current, IDM: 30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 82mJ.

Features

IRF7314TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel MOSFET; (4)Surface Mount; (5)Fully Avalanche Rated.

Diagrams

IRF7314TRPBF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7314TRPBF
IRF7314TRPBF

International Rectifier

MOSFET MOSFT DUAL PCh -20V 5.3A

Data Sheet

0-1: $0.69
1-25: $0.43
25-100: $0.29
100-250: $0.28
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF710
IRF710

Vishay/Siliconix

MOSFET N-Chan 400V 2.0 Amp

Data Sheet

0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710

Other


Data Sheet

Negotiable 
IRF710_R4943
IRF710_R4943

Fairchild Semiconductor

MOSFET TO-220AB

Data Sheet

Negotiable 
IRF7101
IRF7101

International Rectifier

MOSFET N-CH 20V 3.5A 8-SOIC

Data Sheet

1-570: $0.45
IRF7101PBF
IRF7101PBF

International Rectifier

MOSFET

Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR

International Rectifier

MOSFET N-CH 20V 3.5A 8-SOIC

Data Sheet

1-4000: $0.41