(China (Mainland))
Product Summary
The M29W640FT70N6E is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W640FT70N6E is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the M29W640FT70N6E. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
Parametrics
M29W640FT70N6E absolute maximum ratings: (1)TBIAS Temperature Under Bias: –50 to 125 °C; (2)TSTG Storage Temperature –65 to 150 °C; (3)VIO Input or Output Voltage: –0.6 to VCC +0.6 V; (4)VCC Supply Voltage: –0.6 to 4 V; (5)VID Identification Voltage: –0.6 to 13.5 V; (6)VPP Program Voltage: –0.6 to 13.5 V; (7)Load Capacitance (CL): 30 pF; (8)Input Rise and Fall Times: 10 ns.
Features
M29W640FT70N6E features: (1)Unlock Bypass Program command – Faster Production/Batch Programming; (2)VPP/WP pin for Fast Program andWrite Protect; (3)Temporary Block Unprotection mode; (4)Common Flash Interface – 64-bit Security Code; (5)Extended Memory Block – Extra block used as security block or to; (6)store additional information; (7)Low power consumption – Standby and Automatic Standby; (8)100,000 Program/Erase cycles per block.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 M29W640FT70N6E |
STMicroelectronics |
Flash STD FLASH 64 MEG |
Data Sheet |
Negotiable |
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Pricing (USD) |
Quantity | ||||
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