Product Summary
The IRF7314TRPBF is a HEXFET Power MOSFET. The IRF7314TRPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7314TRPBF absolute maximum ratings: (1)Drain source voltage, VDS: 30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, 6.5A; TA=70℃, 5.2A; (4)Pulsed drain current, IDM: 30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 82mJ.
Features
IRF7314TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel MOSFET; (4)Surface Mount; (5)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7314TRPBF |
International Rectifier |
MOSFET MOSFT DUAL PCh -20V 5.3A |
Data Sheet |
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